| 发明名称 | Memory device | ||
| 摘要 | According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device. | ||
| 申请公布号 | US8895948(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201313776458 | 申请日期 | 2013.02.25 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Arayashiki Yusuke |
| 分类号 | H01L29/02;H01L45/00;H01L27/24 | 主分类号 | H01L29/02 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A memory device comprising: a first electrode; a second electrode; and a resistance change film connected between the first electrode and the second electrode, wherein: an ion metal is introduced in a matrix material in the resistance change film, a concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film, and the memory device does not include a layer which supplies the resistance change film with ions. | ||
| 地址 | Tokyo JP | ||