Impurity-induced disorder in III-nitride materials and devices

摘要

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

主权项

1. A method for impurity-induced layer disordering in III-nitride materials, comprising:
growing a III-nitride heterostructure at a growth temperature chosen to prevent layer disordering and doping one or more of the heterostructure layers with an impurity during growth, and post-growth annealing the heterostructure at an annealing temperature, time, and carrier gas pressure that induces disorder of one or more the heterostructure layer interfaces.