发明名称 |
Memory device, method of operating the same, and electronic device having the memory device |
摘要 |
A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively. |
申请公布号 |
US8897055(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201313771633 |
申请日期 |
2013.02.20 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Ryu Je-Min;Kim Gil-Su;Oh Jong-Min;Seo Sung-Min;Song Ho-Young;Cho Yong-Ho |
分类号 |
G11C17/16;G11C29/00;G11C7/10;G11C17/18 |
主分类号 |
G11C17/16 |
代理机构 |
Muir Patent Consulting, PLLC |
代理人 |
Muir Patent Consulting, PLLC |
主权项 |
1. A memory device including a memory cell array, the memory device comprising:
a fuse device including a fuse cell array and a fuse control circuit, wherein the fuse cell array comprises:
a first fuse cell sub-array configured to store first data associated with operation of the fuse control circuit; anda second fuse cell sub-array configured to store second data associated with operation of the memory device, wherein the fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively. |
地址 |
Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR |