发明名称 Memory device, method of operating the same, and electronic device having the memory device
摘要 A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively.
申请公布号 US8897055(B2) 申请公布日期 2014.11.25
申请号 US201313771633 申请日期 2013.02.20
申请人 Samsung Electronics Co., Ltd. 发明人 Ryu Je-Min;Kim Gil-Su;Oh Jong-Min;Seo Sung-Min;Song Ho-Young;Cho Yong-Ho
分类号 G11C17/16;G11C29/00;G11C7/10;G11C17/18 主分类号 G11C17/16
代理机构 Muir Patent Consulting, PLLC 代理人 Muir Patent Consulting, PLLC
主权项 1. A memory device including a memory cell array, the memory device comprising: a fuse device including a fuse cell array and a fuse control circuit, wherein the fuse cell array comprises: a first fuse cell sub-array configured to store first data associated with operation of the fuse control circuit; anda second fuse cell sub-array configured to store second data associated with operation of the memory device, wherein the fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively.
地址 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR