Integrated circuit device

摘要

An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.

主权项

1. An integrated circuit device comprising a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate, the first transistor having a first operating voltage, the second transistor having a second operating voltage, the first operating voltage is higher than the second operating voltage,
wherein the first transistor comprises: a first drain structure formed in the semiconductor substrate; a first source structure formed in the semiconductor substrate, and comprising a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region, wherein the heavily doped second-polarity region is surrounded by the second-polarity grade region, and the second-polarity grade region is surrounded by the first-polarity body region; an isolation structure formed in the semiconductor substrate, and arranged between the first drain structure and the first source structure; and a first gate structure arranged between the first source structure and the first drain structure, and partially disposed over the isolation structure, wherein the second transistor comprises: a second drain structure formed in the semiconductor substrate; a second source structure formed in the semiconductor substrate; a second gate structure formed in the semiconductor substrate, and arranged between the second source structure and the second drain structure; and a first-polarity drift region formed in the semiconductor substrate for at least surrounding the second drain structure, wherein the first-polarity drift region and the first-polarity body region have the same dopant concentration.