Semiconductor device

摘要

An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.;A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.

主权项

1. A semiconductor device comprising:
a semiconductor layer composed of an oxide semiconductor material containing indium; an ohmic electrode provided on the semiconductor layer and having an ohmic contact with the semiconductor layer; and an intermediate layer provided between the semiconductor layer and the ohmic electrode, wherein the intermediate layer includes a first region whose indium atomic concentration is greater than that of an interior of the semiconductor layer and a second region whose indium atomic concentration is less than that of the first region, the first and second regions are constituted to contain an oxide of a metal forming the ohmic electrode, the metal forming the ohmic electrode contains manganese (Mn), and an atomic concentration of the manganese is lower in the first region than in the second region.