发明名称 Near infrared doped phosphors having an alkaline gallate matrix
摘要 Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr3+ or Ni2+ ions, which in some embodiments can exhibit persistent infrared phosphorescence for as long as 200 hours. Such phosphors can be used, for example, as components of a luminescent paint.
申请公布号 US8894882(B2) 申请公布日期 2014.11.25
申请号 US201013394629 申请日期 2010.09.21
申请人 University of Georgia Research Foundation, Inc. 发明人 Pan Zhengwei;Yan Wuzhao
分类号 C09K11/66;C09K11/64;C09K11/08;H01L33/00;C09K11/68;C09K11/60;C09D5/22 主分类号 C09K11/66
代理机构 Mueting Raasch & Gebhardt, P.A. 代理人 Mueting Raasch & Gebhardt, P.A.
主权项 1. A phosphor comprising a material having one or more of the following formulas: AGa5O8:xC,yR;and AGaO2:xC,yR wherein a portion of Ga may optionally be replaced with a Group IIIA metal and/or a Group IVA metal; and wherein each A is independently an alkaline metal; each C is independently Cr3+, Ni2+, or a combination thereof; each R is independently a Zn2+ ion, an alkaline earth metal ion, or a combination thereof; each x is independently 0.01 to 5 and represents mol % based on the total moles of Ga and any replacements thereof; and each y is independently 0.1 to 2 and represents mol % based on the total moles of Ga and any replacements thereof.
地址 Athens GA US