发明名称 |
Near infrared doped phosphors having an alkaline gallate matrix |
摘要 |
Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr3+ or Ni2+ ions, which in some embodiments can exhibit persistent infrared phosphorescence for as long as 200 hours. Such phosphors can be used, for example, as components of a luminescent paint. |
申请公布号 |
US8894882(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201013394629 |
申请日期 |
2010.09.21 |
申请人 |
University of Georgia Research Foundation, Inc. |
发明人 |
Pan Zhengwei;Yan Wuzhao |
分类号 |
C09K11/66;C09K11/64;C09K11/08;H01L33/00;C09K11/68;C09K11/60;C09D5/22 |
主分类号 |
C09K11/66 |
代理机构 |
Mueting Raasch & Gebhardt, P.A. |
代理人 |
Mueting Raasch & Gebhardt, P.A. |
主权项 |
1. A phosphor comprising a material having one or more of the following formulas:
AGa5O8:xC,yR;and AGaO2:xC,yR wherein a portion of Ga may optionally be replaced with a Group IIIA metal and/or a Group IVA metal; and wherein each A is independently an alkaline metal; each C is independently Cr3+, Ni2+, or a combination thereof; each R is independently a Zn2+ ion, an alkaline earth metal ion, or a combination thereof; each x is independently 0.01 to 5 and represents mol % based on the total moles of Ga and any replacements thereof; and each y is independently 0.1 to 2 and represents mol % based on the total moles of Ga and any replacements thereof. |
地址 |
Athens GA US |