发明名称 Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device
摘要 There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
申请公布号 US8896187(B2) 申请公布日期 2014.11.25
申请号 US201213532081 申请日期 2012.06.25
申请人 Hitachi Metals, Ltd. 发明人 Suenaga Kazufumi;Shibata Kenji;Watanabe Kazutoshi;Nomoto Akira;Horikiri Fumimasa
分类号 H01L41/083;H01L41/08;H01L41/187;H01L41/316 主分类号 H01L41/083
代理机构 Fleit Gibbons Gutman Bongini & Bianco PL 代理人 Fleit Martin;Bianco Paul D.;Fleit Gibbons Gutman Bongini & Bianco PL
主权项 1. A piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
地址 Tokyo JP