发明名称 Power storage device and method for manufacturing the same
摘要 To provide a power storage device with improved cycle characteristics and a method for manufacturing the power storage device, a power storage device is provided with a conductive layer in contact with a surface of an active material layer including a silicon layer after an oxide film, such as a natural oxide film, which is formed on the surface of the active material layer is removed. The conductive layer is thus provided in contact with the surface of the active material layer including a silicon layer, whereby the conductivity of the electrode surface of the power storage device is improved; therefore, cycle characteristics of the power storage device can be improved.
申请公布号 US8896098(B2) 申请公布日期 2014.11.25
申请号 US201113117315 申请日期 2011.05.27
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei
分类号 H01L29/92;H01M4/134;H01M10/0525;H01M4/1395 主分类号 H01L29/92
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A power storage device comprising: a current collector; an active material layer over the current collector, the active material layer having: a first region comprising crystalline silicon; anda second region comprising crystalline silicon protrusions on the first region, wherein the crystalline silicon protrusions continuously extend from the first region; and a conductive layer which is on and in contact with a surface of the second region of the active material layer.
地址 Kanagawa-ken JP