Light emitting diode

摘要

AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

主权项

1. A light emitting device (LED), comprising:
a substrate; and a plurality of serial arrays having a plurality of light emitting cells connected in series on the substrate, wherein, first connectors are configured to connect at least two of the plurality of the light emitting cells in series, and second connectors are configured to connect the at least two of the plurality of the light emitting cells to at least two other light emitting cells of the plurality of the light emitting cells in parallel to prevent a reverse voltage from being applied to the plurality of light emitting cells, each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, and an upper electrode layer formed on the upper semiconductor layer, wherein the upper electrode layer is formed with transparent characteristic material and the upper electrode layer is directly in ohmic contact with the upper semiconductor layer to lower contact resistance, and a buffer layer is interposed between the lower semiconductor layer and the substrate to reduce mismatch between the substrate and the lower semiconductor layer, each of the light emitting cells further comprises an upper electrode pad and a lower electrode pad respectively disposed at the corners of the upper electrode layer and the lower semiconductor layer and being diagonally opposite to each other, upper electrode pads and lower electrode pads of four immediately adjacent light emitting cells are connected by a “” shaped connector and are disposed in a symmetrical pattern, and the upper electrode layer is formed directly between the upper electrode pad and the upper semiconductor layer.