Cobalt titanium oxide dielectric films

摘要

Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process such as atomic layer deposition.

主权项

1. A method comprising:
forming cobalt titanium oxide by a monolayer or partial monolayer sequencing process including:
pulsing a cobalt-containing precursor;pulsing a titanium-containing precursor; andperforming a removal process between pulsing the cobalt-containing precursor and pulsing the titanium-containing precursor such that a gas containing cobalt is not present when pulsing the titanium-containing precursor and a gas containing titanium is not present when pulsing the cobalt-containing precursor.