| 发明名称 | Method for creating semiconductor junctions with reduced contact resistance | ||
| 摘要 | Embodiments of the invention relate generally to creating semiconductor junctions with reduced contact resistance. In one embodiment, the invention provides a method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials; layering the at least two populations of semiconducting materials to form at least two layers; and consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers. | ||
| 申请公布号 | US8895411(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201213644812 | 申请日期 | 2012.10.04 |
| 申请人 | Evident Technologies | 发明人 | Ballinger Clinton T.;Perera Susanthri;Peng Adam Z. |
| 分类号 | H01L21/20;H01L21/18;H01L23/48 | 主分类号 | H01L21/20 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Hoffman Warnick LLC |
| 主权项 | 1. A method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials, wherein each of the at least two populations of semiconducting materials are chosen from the group consisting of: semiconductor powders, semiconducting nanomaterials, and solid semiconductor materials; layering the at least two populations of semiconducting materials to form at least two layers, the layering comprising applying the at least two populations of semiconducting materials adjacent to one another and in alternating layers; and consolidating the at least two populations of semiconducting materials using at least one of heat and pressure, wherein the consolidating creates an electrical connection between the at least two alternating layers. | ||
| 地址 | Troy NY US | ||