Patterning process and resist composition

摘要

A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

主权项

1. A process for forming a pattern, comprising the steps of:
coating a first positive resist composition comprising a copolymer comprising recurring units having lactone as an adhesive group and recurring units having an acid labile group, a photoacid generator, a base generator, and a first solvent comprising at least one of PGMEA and cyclohexanone onto a substrate to form a first resist film, exposing the first resist film to high-energy radiation, post-exposure baking, and developing the first resist film with a developer to form a first resist pattern, heating the first resist pattern at 100 to 140° C. for 3 to 180 seconds for causing the base generator to generate an amine compound for inactivating the first resist pattern to acid while the first resist pattern remains soluble in the first solvent, coating a second positive resist composition comprising a second solvent which contains an alcohol of 3 to 8 carbon atoms and an optional ether of 6 to 12 carbon atoms, which does not dissolve away the first resist pattern, and which is different from the first solvent onto the first resist pattern-bearing substrate to form a second resist film, exposing the second resist film to high-energy radiation, post-exposure baking, and developing the second resist film with a developer to form a second resist pattern, wherein said base generator has the general formula (1′) or (2′):wherein R is a straight, branched or cyclic C1-C8 alkylene group, a straight or branched C2-C8 alkenylene or C7-C14 aralkylene group, a C6-C12 arylene group, or a straight, branched or cyclic C1-C6 alkylene group having a halo- or C1-C6 alkoxy-substituted aryl group bonded thereto, which may be separated by a —COO—, —CONH— or —NHCO— group, and
R′ is a trivalent group derived by eliminating one hydrogen atom from a straight, branched or cyclic C1-C8 alkylene group.