发明名称 Composition and method to remove excess material during manufacturing of semiconductor devices
摘要 A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.
申请公布号 US8894774(B2) 申请公布日期 2014.11.25
申请号 US201113094967 申请日期 2011.04.27
申请人 Intermolecular, Inc. 发明人 Duong Anh
分类号 C11D7/32;C11D7/26;C11D7/34;C11D7/50;H01L21/285;H01L21/02 主分类号 C11D7/32
代理机构 代理人
主权项 1. A method for removing platinum residues during semiconductor processing and manufacturing, said method comprising: providing a substrate; applying a metal chelator mixture to said substrate, said metal chelator mixture comprising a metal chelator and a solvent,wherein the metal chelator comprises a carboxylic acid group,wherein said metal chelator selectively binds to said platinum residues thereby rendering said platinum residues bound to the metal chelator soluble in the metal chelator mixture; and rinsing said metal chelator mixture to selectively remove said platinum residues from said substrate.
地址 San Jose CA US