发明名称 |
Composition and method to remove excess material during manufacturing of semiconductor devices |
摘要 |
A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide. |
申请公布号 |
US8894774(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201113094967 |
申请日期 |
2011.04.27 |
申请人 |
Intermolecular, Inc. |
发明人 |
Duong Anh |
分类号 |
C11D7/32;C11D7/26;C11D7/34;C11D7/50;H01L21/285;H01L21/02 |
主分类号 |
C11D7/32 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for removing platinum residues during semiconductor processing and manufacturing, said method comprising:
providing a substrate; applying a metal chelator mixture to said substrate,
said metal chelator mixture comprising a metal chelator and a solvent,wherein the metal chelator comprises a carboxylic acid group,wherein said metal chelator selectively binds to said platinum residues thereby rendering said platinum residues bound to the metal chelator soluble in the metal chelator mixture; and rinsing said metal chelator mixture to selectively remove said platinum residues from said substrate. |
地址 |
San Jose CA US |