发明名称 |
Silicon Production method |
摘要 |
There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells.;There is also provided an industrially advantageous method that removes contaminants from a chlorosilane circulating system which produces trichlorosilane in producing silicon from trichlorosilane by a vapor deposition method. |
申请公布号 |
US8894959(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US200611920418 |
申请日期 |
2006.05.15 |
申请人 |
Tokuyama Corporation |
发明人 |
Wakamatsu Satoru;Oda Hiroyuki |
分类号 |
C01B33/03;C01B33/107;H01L31/18;C01B33/035 |
主分类号 |
C01B33/03 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A silicon production method comprising:
a semiconductor grade silicon production step (step A) of producing semiconductor grade silicon on a heated substrate by feeding trichlorosilane vapor together with hydrogen gas into a deposition reactor having the heated substrate, a chlorosilane separation step (step B) of separating hydrogen and a chlorosilane from gas discharged from the step A, a disproportionation step (step C) of passing a mixture comprising a low-boiling-point silane component and tetrachlorosilane which is obtained in the step B through a chlorosilane disproportionation solid catalyst bed to produce a mixture having an increased proportion of trichlorosilane, a trichlorosilane separation step (step D) of obtaining trichlorosilane by distilling and purifying the mixture obtained in the step C, a collection step (step (E(i))) which comprises mixing a stream of the trichlorosilane obtained in step D, which contains chlorosilyl phosphine impurities, with hydrogen, decomposing said impurities by raising the average temperature of a reaction gas to over 800° C., depositing solar grade silicon, and collecting the solar grade silicon, a recycling step (step (E(ii))) which comprises recycling a separate stream of trichlorosilane obtained in step D, which is different from the stream used in step E(i), back to step A, and a replenishing step (step F) of replenishing a separately prepared chlorosilane to any of the steps A to E(i). |
地址 |
Shunan-Shi JP |