Semiconductor device and method for forming the same

摘要

The invention provides a semiconductor device, including: a semiconductor base, on an insulation layer; source/drain regions abutting opposite first sides of the semiconductor base; and gates at opposite second sides of the semiconductor base, wherein the semiconductor base includes a cavity, and the insulation layer is exposed by the cavity. The invention also provides a method for forming a semiconductor device, including: forming a semiconductor bottom on an insulation layer; forming source/drain regions, the source/drain regions abutting opposite first sides of the semiconductor bottom; forming gates on opposite second sides of the semiconductor bottom; and removing a part of the semiconductor bottom to form a cavity in the semiconductor bottom, the cavity exposing the insulation layer. With the technical solutions provided by the invention, short-channel effects can be alleviated, and the resistance of the source/drain regions and parasitic capacitance can be reduced.

主权项

1. A semiconductor device, comprising:
a semiconductor base on an insulation layer, wherein the semiconductor base includes opposite first sides and opposite second sides, wherein the opposite first sides and opposite second sides are located at periphery of the semiconductor base and the semiconductor base is surrounded by the opposite first sides and opposite second sides; a source region abutting one side of the opposite first sides and located outside the semiconductor base; a drain region abutting the other side of the opposite first sides and located outside the semiconductor base; a first gate at one side of the opposite second sides; and a second gate at the other side of the opposite second sides of the semiconductor base, wherein a cavity is located in the semiconductor base, wherein the cavity is filled with an insulation material, the insulation layer is directly contacted with the insulation material and the insulation material is surrounded by the semiconductor base on at least four vertical sides.