Electronic device including a tunnel structure

摘要

An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

主权项

1. An electronic device comprising:
a tunnel structure comprising:
a substrate having a primary surface and an active region;a first electrode including a lightly doped region of the substrate, wherein the first electrode extends to the primary surface and has a first conductivity type;a second electrode disposed over the first electrode;a tunnel dielectric layer disposed between the first and second electrodes;a first heavily doped region of the substrate, wherein the first heavily doped region is at the primary surface, abuts the lightly doped region of the first electrode, has the first conductivity type,wherein:
from a top view, the first heavily doped region is spaced apart from the second electrode and all of the second electrode disposed over the active region of the tunnel structure has the first conductivity type; andat the primary surface within the active region, the second electrode only is disposed over the lightly doped region.