MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE HAVING QUANTUM ISLAND FOR HIGH QUALITY SEMICONDUCTOR DEVICE
摘要
<p>The present invention relates to a method of manufacturing a high quality semiconductor substrate. A high quality semiconductor substrate having improved internal quantum efficiency can be manufactured by using a template layer for re-growing a nitride semiconductor layer having a low defect density after a quantum island is inserted between the nitride semiconductor layers formed on a substrate such as a sapphire.</p>
申请公布号
KR20140134809(A)
申请公布日期
2014.11.25
申请号
KR20130054465
申请日期
2013.05.14
申请人
KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
发明人
NAM, OK HYUN;JUNG, CHIL SUNG;JANG, JONG JIN;JEONG, JOO CHEOL;KIM, JIN WAN;LEE, KYUNG JAE