Radio frequency and microwave devices and methods of use

摘要

Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

主权项

1. A power device, comprising:
a first interconnect layer comprising:
a compound semiconductor layer; andan ohmic layer disposed on the compound semiconductor layer, the ohmic layer comprising:
a plurality of source strips;a first plurality of drain strips disposed between the plurality of source strips in an alternating pattern;a second plurality of drain strips disposed between the plurality of source strips in an alternating pattern, the plurality of source strips being spaced apart from both the first and second pluralities of drain strips to form a series of channels;first gate finger segments disposed in the series of channels;second gate finger segments disposed in the series of channels;a first plurality of gate finger pads disposed in an alternating pattern and proximate first ends of the first plurality of drain strips and first ends of the first plurality of source strips such that each of the first gate finger segments are associated with two of the first plurality of gate finger pads; anda second plurality of gate finger pads disposed in an alternating pattern and proximate second ends of the plurality of drain strips and first ends of the first plurality of source strips such that each of the second gate finger segments are associated with two of the second plurality of gate finger pads; a first dielectric material at least partially covering the ohmic layer; a first metal layer disposed on the first dielectric material, the first metal layer comprising a plurality of strips of a first metal, the strips being spaced apart from one another; vias extending through the first dielectric material to electrically couple the ohmic layer to the plurality strips of the first metal layer; a second dielectric material covering the first metal layer; a second interconnect layer comprising:
a pad layer disposed on an upper surface of the second dielectric material and comprising a plurality of pads that are spaced apart from one another, the plurality of pads comprising:
a source metal pad;a first drain metal pad and a second drain metal pad; anda first gate metal pad and a second gate metal pad; vias extending through the second dielectric material to electrically couple at least a portion of the plurality of strips of the first metal layer associated with the first plurality gate finger pads to the first gate metal pad; vias extending through the second dielectric material to electrically couple at least a portion of the plurality of strips of the first metal layer associated with the second plurality of gate finger pads to the second gate metal pad; vias extending through the second dielectric material to electrically couple at least a portion of the plurality of strips of the first metal layer associated with at least a portion of the drain strips to the first drain metal pad; vias extending through the second dielectric material to electrically couple at least a portion of the plurality of strips of the first metal layer associated with at least a portion of the drain strips to the second drain metal pad; and vias extending through the second dielectric material to electrically couple the plurality of strips of the first metal layer associated with the source strips of both the first and second pluralities of source strips to the source metal pad.