发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a memory cell array configured to include a plurality of memory blocks, a voltage generator configured to output operating voltages for data input and output to global lines, and a row decoder configured to transfer the operating voltages to local lines of a memory block, selected from among the plurality of memory blocks, and supply a ground voltage to local lines of unselected memory blocks in response to address signals.
申请公布号 US8897068(B2) 申请公布日期 2014.11.25
申请号 US201213452236 申请日期 2012.04.20
申请人 SK Hynix Inc. 发明人 Kim Beom Sik;Park Young Soo
分类号 G11C16/04;G11C16/34 主分类号 G11C16/04
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A semiconductor memory device, comprising: a memory cell array configured to comprise a plurality of memory blocks; a voltage generator configured to output operating voltages for data input and output to global lines; and a row decoder configured to transfer the operating voltages to local lines of a memory block, selected from among the plurality of memory blocks, and including transistors connected between local lines of the plurality of memory blocks and ground terminal, wherein the row decoder operates the transistors connected between the local lines of unselected memory blocks and the ground terminal in response to block select signals so as to supply a ground voltage to the local lines of the unselected memory blocks.
地址 Gyeonggi-do KR