Method of programming nonvolatile memory device

摘要

A method of programming a nonvolatile memory device includes sequentially programming first to (n−1)th logical pages of all the physical pages of a first memory block of the memory blocks in response to a first program command, a step of loading data of the first to (n−1)th logical pages stored in a first physical page of the first memory block and latching the loaded data in first to (n−1)th latches of each of the page buffers, respectively, when receiving a second program command after programming all the first to (n−1)th logical pages, and latching new program data, received along with the second program command, in an nth latch of the corresponding page buffer and programming the data, stored in the first to nth latches of the page buffer, into a first physical page of a second memory block of the memory blocks.

主权项

1. A programming method of a non-volatile memory device, comprising:
storing LSB data and CSB data in an LSB page and a CSB page of word lines included in a first memory block of the non-volatile memory device; receiving a program command and MSB data; and storing the LSB data read from the LSB page included in the first memory block of the non-volatile memory device, the CSB data read from the CSB page included in the first memory block of the non-volatile memory device, and the MSB data in a second memory block of the non-volatile memory device.