发明名称 Electro-optical device and electronic apparatus
摘要 An electro-optical device includes a pixel electrode provided on a substrate, a transistor provided between the substrate and the pixel electrode, a first capacitor electrode provided between the pixel electrode and the transistor, and be electrically connected to the pixel electrode and the transistor, a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, be located so as to be opposite the first capacitor electrode via a capacitor insulating film, and be supplied with a predetermined electric potential, and a light-shielding film provided between the pixel electrode and the second capacitor electrode, be located so as to be at least partially overlapped by the transistor, and be electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film.
申请公布号 US8896775(B2) 申请公布日期 2014.11.25
申请号 US201113042595 申请日期 2011.03.08
申请人 Seiko Epson Corporation 发明人 Moriwaki Minoru;Yasukawa Masahiro;Wakita Ken
分类号 G02F1/1343;G02F1/136;G02F1/1362;H01L27/12;H01L27/13;H01L29/786 主分类号 G02F1/1343
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. An electro-optical device comprising: a substrate; a pixel electrode corresponding to a pixel on the substrate; a transistor provided between the substrate and the pixel electrode, the transistor having a semiconductor layer, a gate electrode, and an LDD structure; a first capacitor electrode provided between the pixel electrode and the transistor, the first capacitor electrode being electrically connected to the pixel electrode and the transistor; a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, the second capacitor electrode being located so as to be opposite the first capacitor electrode via a capacitor insulating film, and the second capacitor electrode configured to be supplied with a predetermined electric potential; a light-shielding film provided between the pixel electrode and the second capacitor electrode, the light-shielding film being located so as to be at least partially overlapped by the semiconductor layer, and the light-shielding film being electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film, wherein the second capacitor electrode and the light-shielding film are electrically connected to each other via the contact hole that is at least partially overlapped with an LDD area positioned at the pixel electrode side; and a capacitor line provided between the pixel electrode and the light-shielding film, the light-shielding film configured to be supplied with a predetermined electric potential via the capacitor line.
地址 Tokyo JP