Plasma processing apparatus and method

摘要

A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

主权项

1. A plasma processing apparatus for generating a plasma of a gas and performing a plasma processing on a target object to be processed by an action of the plasma, comprising:
a depressurizable processing chamber; a lower electrode, provided in the processing chamber, serving as a mounting table for mounting thereon the target object; a facing electrode, serving as an upper electrode or an antenna electrode provided at the processing chamber so as to be opposite to the lower electrode; a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber; and a plasma generation unit for generating a plasma of the gas including the halogen-containing gas and the oxygen gas in the processing chamber, wherein, among inner surfaces of the processing chamber which are exposed to the plasma of the gas including the halogen-containing gas and the oxygen gas, at least a part of or all of the surfaces between a mounting position of the target object and the facing electrode; or at least a part of or all of the surfaces of the facing electrode are coated with a fluorinated compound, wherein the fluorinated compound contains YF3, and wherein an outermost layer of the fluorinated compound is transformed into a transformed layer containing Y, O and F or containing Y, O, F and at least one of Cl and Br by the plasma of the gas including the halogen-containing gas and the oxygen gas.