| 发明名称 | Semiconductor memory device | ||
| 摘要 | A semiconductor memory device includes a pad configured to receive a first write data from outside of the semiconductor memory device, and a write circuit configured to generate a plurality of second write data which are to be written in memory cells of all banks to be tested in response to a test mode signal, data strobe signals, a write enable signal, and the first write data transferred through the pad. | ||
| 申请公布号 | US8897081(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201314104933 | 申请日期 | 2013.12.12 |
| 申请人 | SK Hynix Inc. | 发明人 | Ku Young-Jun;Kim Ki-Ho |
| 分类号 | G11C7/10;G11C7/00;G11C8/00;G11C29/26;G11C29/08;G11C29/40 | 主分类号 | G11C7/10 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor memory device comprising: a pad configured to receive a first write data from outside of the semiconductor memory device; and a write circuit configured to generate a plurality of second write data which are to be written in memory cells of all banks to be tested in response to a test mode signal, data strobe signals, a write enable signal, and the first write data transferred through the pad. | ||
| 地址 | Gyeonggi-do KR | ||