Solid-state image pickup device and a method of manufacturing the same

摘要

A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material.

主权项

1. A solid-state image pickup device, comprising:
a silicon layer; a pixel portion formed in said silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident light, an alignment mark formed in a periphery of said pixel portion and in said silicon layer; and a contact portion connecting a first electrode within a wiring layer formed on a first surface of said silicon layer, and a second electrode formed on a second surface opposite to said first surface of said silicon layer through an insulating film, wherein said alignment mark and said contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through said silicon layer through respective insulating layers made of the same material, characterized in that said first electrode within said wiring layer is an uppermost wiring layer, and a connection element is formed between said contact portion and said first electrode.