| 发明名称 | Semiconductor devices having gates including oxidized nickel | ||
| 摘要 | Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein. | ||
| 申请公布号 | US8896122(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201012778334 | 申请日期 | 2010.05.12 |
| 申请人 | Cree, Inc. | 发明人 | Mieczkowski Van;Hagleitner Helmut;Haberern Kevin |
| 分类号 | H01L21/335;H01L29/778;H01L29/24;H01L29/80;H01L29/66;H01L29/47;H01L29/812;H01L29/872;H01L29/16;H01L29/20 | 主分类号 | H01L21/335 |
| 代理机构 | Myers Bigel Sibley & Sajovec | 代理人 | Myers Bigel Sibley & Sajovec |
| 主权项 | 1. A Schottky barrier semiconductor device comprising: a wide bandgap semiconductor layer; a gate on the wide bandgap semiconductor layer, the gate comprising a metal layer directly on the wide bandgap semiconductor layer, the metal layer including a nickel oxide (NiO) layer; and a layer of Nickel between the wide bandgap semiconductor layer and the NiO layer such that the wide bandgap layer does not contact the NiO layer. | ||
| 地址 | Durham NC US | ||