| 发明名称 | Semiconductor device bonded by an anisotropic conductive film | ||
| 摘要 | A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a conductive adhesive layer and an insulating adhesive layer stacked thereon, an amount of reactive monomers in the conductive adhesive layer being higher than an amount of reactive monomers in the insulating adhesive layer. | ||
| 申请公布号 | US8896117(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201213679113 | 申请日期 | 2012.11.16 |
| 申请人 | Cheil Industries, Inc. | 发明人 | Ko Youn Jo;Kim Jin Kyu;Uh Dong Seon;Lee Kil Yong;Cho Jang Hyun |
| 分类号 | H01L23/52;C09J9/02;C09J133/04;C09J7/00;H01L23/00 | 主分类号 | H01L23/52 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a conductive adhesive layer and an insulating adhesive layer stacked thereon, an amount of reactive monomers in the conductive adhesive layer being higher than an amount of reactive monomers in the insulating adhesive layer. | ||
| 地址 | Gumi-si, Kyeongsangbuk-do KR | ||