Semiconductor light-emitting element manufacturing method, lamp, electronic equipment, and mechanical apparatus

摘要

A semiconductor light-emitting element manufacturing method including: a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus; and a second step in which a regrowth layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto the aforementioned first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus.

主权项

1. A semiconductor light-emitting element manufacturing method comprising:
a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus; and a second step in which a regrowth layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto said first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus, wherein the regrowth layer is a regrowth layer of the first n-type semiconductor layer laminated in the first step, said first n-type semiconductor layer and regrowth layer are n-contact layers, and said second n-type semiconductor layer is an n-clad layer.