Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit

摘要

A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.

主权项

1. An integrated semiconductor device, comprising:
a substrate having a first region and a second region, wherein the first region and the second region are non-overlapping; a semiconductor unit formed on the first region; and a micro electro mechanical system (MEMS) unit formed on the second region, wherein the MEMS unit comprises a microphone comprising: a semiconductor diaphragm having a first diaphragm surface having a plurality of cavities formed in only a partial thickness of the semiconductor diaphragm and exposed to air, and a second diaphragm surface without a cavity and opposite to the first diaphragm surface; an interlayer dielectric disposed on the second diaphragm surface of the semiconductor diaphragm; and a metal layer disposed on the interlayer dielectric, wherein the second diaphragm surface of the semiconductor diaphragm is exposed to an opening passing through the interlayer dielectric and the metal layer.