| 发明名称 | Method, apparatus and composition for wet etching | ||
| 摘要 | A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed. | ||
| 申请公布号 | US8894877(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201113276925 | 申请日期 | 2011.10.19 |
| 申请人 | Lam Research AG | 发明人 | Detterbeck Stefan |
| 分类号 | C09K13/00;C09K13/04;C09K13/08;C03C15/00;C25F3/00;H01L21/3213;H01L27/102;H01L27/105 | 主分类号 | C09K13/00 |
| 代理机构 | Young & Thompson | 代理人 | Young & Thompson |
| 主权项 | 1. A liquid composition for wet etching, comprising: 0.05-0.4 percent by weight hydrofluoric acid; 15-40 percent by weight nitric acid; 55-85 percent by weight sulfuric acid; and 2-20 percent by weight water. | ||
| 地址 | Villach AT | ||