| 发明名称 | Cascode scheme for improved device switching behavior | ||
| 摘要 | A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes. | ||
| 申请公布号 | US8896131(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201113020758 | 申请日期 | 2011.02.03 |
| 申请人 | Alpha and Omega Semiconductor Incorporated | 发明人 | Bhalla Anup;Lui Sik;Hu Jun;Wang Fei |
| 分类号 | H01L23/528;H03K17/10;H03K17/04;H01L27/085;H01L27/06;H03K17/567;H03K17/687 | 主分类号 | H01L23/528 |
| 代理机构 | JDI Patent | 代理人 | Isenberg Joshua D.;JDI Patent |
| 主权项 | 1. A switching device, comprising: a low voltage normally-off field effect transistor having four or more electrodes including a source electrode, a drain electrode, a gate electrode, and one or more auxiliary electrodes, wherein the drain electrode is on one surface of a semiconductor die from which the low voltage normally-off transistor is formed, while each of the remaining electrodes is located on an opposite surface of the semiconductor die, the one or more auxiliary electrodes providing electrical contact to a control circuit that is electrically connected to one or more of the other electrodes, wherein the one or more auxiliary electrodes are not directly connected to any of a source region, a gate region, or a drain region of the low voltage normally-off field effect transistor, wherein the control circuit is built into the semiconductor die from which the low voltage normally-off transistor is formed. | ||
| 地址 | Sunnyvale CA US | ||