| 发明名称 | Accumulation type FinFET, circuits and fabrication method thereof | ||
| 摘要 | This description relates to a fin field-effect-transistor (FinFET) including a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one of a Ge, SiGe, or III-V semiconductor. The FinFET further includes a gate dielectric layer over the channel and a gate over the gate dielectric layer. The FinFET further includes a nitride spacer on the substrate adjacent the gate and an oxide layer between the nitride spacer and the gate and between the nitride spacer and the substrate. | ||
| 申请公布号 | US8896055(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201213585436 | 申请日期 | 2012.08.14 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yeh Chih Chieh;Chang Chih-Sheng;Wann Clement Hsingjen |
| 分类号 | H01L21/336;H01L27/088;H01L29/78;H01L29/66;H01L21/8234 | 主分类号 | H01L21/336 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A fin field-effect-transistor (FinFET), comprising: a substrate; a fin structure on the substrate, the fin structure including a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one of a Ge, SiGe, or III-V semiconductor; a gate dielectric layer over the channel; a gate over the gate dielectric layer; a nitride spacer on the substrate adjacent the gate; and an oxide layer between the nitride spacer and the gate and between the nitride spacer and the substrate. | ||
| 地址 | TW | ||