发明名称 |
Electronic device and method for manufacturing the same |
摘要 |
A highly reliable electronic device that prevents entry of a plating solution via an external electrode and entry of moisture of external environment inside thereof, and generates no soldering defects or solder popping defects which are caused by precipitation of a glass component on a surface of the external electrode. The electrode structure of the electronic device is formed of Cu-baked electrode layers primarily composed of Cu, Cu plating layers formed on the Cu-baked electrode layers and which are processed by a recrystallization treatment, and upper-side plating layers formed on the Cu plating layers. After the Cu plating layers are formed, a heat treatment is performed at a temperature in the range of a temperature at which the Cu plating layers are recrystallized to a temperature at which glass contained in a conductive paste is not softened, so that the Cu plating layers are recrystallized. |
申请公布号 |
US8894836(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201213443932 |
申请日期 |
2012.04.11 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
Katsube Hiroshi;Nishikawa Jun |
分类号 |
C25D5/50;H01G4/30;H01G4/232 |
主分类号 |
C25D5/50 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. A method for manufacturing an electronic device, the method comprising:
applying a conductive paste containing glass and a Cu powder as a primary component to an electronic device main body; baking the electronic device main body and the conductive paste at a predetermined baking temperature to form a Cu-baked electrode layer; precipitating Cu on the Cu-baked electrode layer to form a Cu plating layer; performing a heat treatment at a temperature in the range of a temperature at which the Cu plating layer is recrystallized to a temperature at which the glass contained in the conductive paste is not softened so as to recrystallize the Cu plating layer; and further precipitating a metal on the Cu plating layer to form an upper-side plating layer. |
地址 |
Nagaokakyo-Shi, Kyoto-fu JP |