发明名称 Carbon material and method of manufacturing the same
摘要 By inhibiting generation of particles, a carbon material and a method of manufacturing the carbon material are provided that can be used in the field of semiconductor manufacturing or the like, in which low dust emission is considered important.;A carbon material having a chromium carbide layer formed on a surface of a carbon substrate. The chromium carbide layer is composed of Cr3C2. The carbon material can be manufactured through a first step of forming a chromium carbide layer containing a chromium carbide other than Cr3C2 on a surface of a carbon substrate, and a second step of heat-treating the carbon substrate under a reducing atmosphere to convert the chromium carbide other than Cr3C2 into Cr3C2.
申请公布号 US8896099(B2) 申请公布日期 2014.11.25
申请号 US201213983788 申请日期 2012.02.21
申请人 Toyo Tanso Co., Ltd. 发明人 Setani Kaoru;Matsunaga Hiroaki;Takeda Akiyoshi
分类号 H01L21/02;C04B41/50;C04B41/87;H01L29/12;C04B35/52;C04B41/00 主分类号 H01L21/02
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A carbon material comprising a carbon substrate and a chromium carbide layer formed on a surface of the carbon substrate, wherein the chromium carbide layer comprises Cr3C2 as its main component and has a thickness of not less than 1 μm and less than 50 μm, wherein the number of particles of 0.2 μm or greater is less than 100 per 100 mm2 of the surface of the carbon material, the number of particles being determined by immersing and washing the carbon material in pure water, thereafter applying an ultrasonic wave to the washed carbon material in 3000 mL of pure water to extract particles, and counting the number of the particles with a particle counter.
地址 Osaka-shi JP