Solid-state imaging device, method for manufacturing the same, and electronic apparatus

摘要

A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface.

主权项

1. A solid-state imaging device comprising:
a pad electrode, a sidewall of the pad electrode extending from a first surface of the pad electrode to a second surface of the pad electrode; a carbon-based inorganic film between a passivation film and said pad electrode, said carbon-based inorganic film physically isolating said passivation film from said first surface of the pad electrode; a multilayer wiring layer between a semiconductor substrate and said pad electrode, a portion of the passivation film touching said sidewall of the pad electrode and a surface of the multilayer wiring layer.