| 摘要 |
<p>A thin film forming method is provided to form an epitaxial layer without the defect by removing a silicon containing layer on an insulating film pattern by performing an etching process using the plasma. An insulating film pattern is selectively formed in an upper part of a substrate(S110). The epitaxial layer is formed in the upper substrate by inputting the source gas and the silicon containing layer is formed on the insulating film pattern(S120). The silicon containing layer is removed by generating the plasma and inputting the etching gas(S130). The epitaxial growth is performed for 50 to 200 seconds. The epitaxial layer and the silicon containing layer are formed by the growth ratio of 1:0.3 to 1:0.5.</p> |
