| 发明名称 | Method for forming a multi-level surface on a substrate with areas of different wettability and a semiconductor device having the same | ||
| 摘要 | The invention relates to a method 10 for forming a multi-level surface on a substrate 2, wherein said surface comprises areas of different wettability, the method comprising the step (A, B) of applying a multi-level stamp to the substrate for forming the multi-level surface, said multi-level stamp having different structural regions 1a arranged along the multi-level surface for locally altering wettability properties of at least a portion of a level of the multi-level surface 2a, 2b. The invention further relates to a semiconductor device and a method for manufacturing a semiconductor device. | ||
| 申请公布号 | US8895438(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US200913129260 | 申请日期 | 2009.11.13 |
| 申请人 | Nederlandse Organisatie voor toegepast—natuurwetenschappelijk onderzoek TNO | 发明人 | Peter Maria;Meinders Erwin Rinaldo |
| 分类号 | H01L21/44;B82Y40/00;B82Y10/00;G03F7/00;B29C59/02;B29C35/08 | 主分类号 | H01L21/44 |
| 代理机构 | Waddey & Patterson, P.C. | 代理人 | Waddey & Patterson, P.C. ;Cartiglia James R. |
| 主权项 | 1. A method for forming a multi-level surface on a substrate for manufacturing a semiconductor device, said surface comprising areas of different wettability, the method comprising the step of: applying a multi-level stamp to the substrate for forming the multi-level surface of the semiconductor device, said multi-level stamp having different structural regions arranged along the multi-level surface of the stamp for locally altering wettability properties of at least a portion of a level of the multi-level surface of the substrate. | ||
| 地址 | Delft NL | ||