摘要 |
<p>PURPOSE: A memory system is provided to reduce a bit error by a change of a threshold voltage in a memory cell by using a temperature sensor. CONSTITUTION: A memory system(100) comprises a flash memory(110) and a memory controller(120). According to the temperature change, the memory system controls the level of a bias voltage in the flash memory. The flash memory performs erase, write, and read operation according to the control of the memory controller. The flash memory comprises a plurality of memory cells storing data. Compensate data(105) is stored in the specific area of the memory cell. The memory controller comprises a memory interface(121), a host interface(122), an ECC(Error Checking And Correction) circuit(123), a CPU(Central Processing Unit)(124), a RAM(Random Access Memory)(125), and a temperature sensor(126). The memory controller controls the threshold voltage of the flash memory according to the compensate data stored in the flash memory.</p> |