发明名称 MEMORY SYSTEM INCLUDING TEMPERATURE SENSOR
摘要 <p>PURPOSE: A memory system is provided to reduce a bit error by a change of a threshold voltage in a memory cell by using a temperature sensor. CONSTITUTION: A memory system(100) comprises a flash memory(110) and a memory controller(120). According to the temperature change, the memory system controls the level of a bias voltage in the flash memory. The flash memory performs erase, write, and read operation according to the control of the memory controller. The flash memory comprises a plurality of memory cells storing data. Compensate data(105) is stored in the specific area of the memory cell. The memory controller comprises a memory interface(121), a host interface(122), an ECC(Error Checking And Correction) circuit(123), a CPU(Central Processing Unit)(124), a RAM(Random Access Memory)(125), and a temperature sensor(126). The memory controller controls the threshold voltage of the flash memory according to the compensate data stored in the flash memory.</p>
申请公布号 KR101464256(B1) 申请公布日期 2014.11.25
申请号 KR20080055639 申请日期 2008.06.13
申请人 发明人
分类号 G06F12/00;G11C16/30;G11C16/34 主分类号 G06F12/00
代理机构 代理人
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