发明名称 Indium-less transparent metalized layers
摘要 Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.
申请公布号 US8895874(B1) 申请公布日期 2014.11.25
申请号 US201012721557 申请日期 2010.03.10
申请人 Averatek Corp. 发明人 Sharma Sunity Kumar;Beavers, Jr. Alex Newsom;Furst Thomas
分类号 H01L23/552;C23C14/48 主分类号 H01L23/552
代理机构 McDonnell Boehnen Hulbert & Berghoff LLP 代理人 McDonnell Boehnen Hulbert & Berghoff LLP
主权项 1. An optoelectronic device, comprising: a substrate having a surface; and an optically-porous electrically-conductive layer on the surface of the substrate, wherein the optically-porous electrically-conductive layer has a pattern that defines a plurality of fine openings therethrough such that the optically-porous electrically-conductive layer has an optical transmissivity of at least 85%, the optically-porous electrically-conductive layer comprising elemental palladium monoatomically bound to the surface of the substrate and an electrically conductive layer disposed on the monoatomically-bound elemental palladium.
地址 Santa Clara CA US