Methods for forming thin film storage memory cells

摘要

Methods are provided for manufacturing a thin film storage memory cell. The method includes forming a long select gate on a substrate, and forming thin film storage crystals overlying the long select gate and the adjacent substrate. A left and right control gate are formed on opposite sides of the long select gate, and a long select gate center portion is removed to form a left select gate and a right select gate with a gap therebetween. A drain is formed in the substrate underlying the gap, and a left and right source are formed in the substrate aligned with the left and right control gate.

主权项

1. A method of forming a thin film storage memory cell, the method comprising:
forming a long select gate on a substrate; forming thin film storage crystals overlying the long select gate and the substrate adjacent to the long select gate; forming a left control gate and a right control gate on opposite sides of the long select gate; removing a long select gate center portion to form a left select gate and a right select gate, wherein the left select gate and the right select gate define a gap therebetween; forming a drain in the substrate directly underlying the gap; and forming a left source in the substrate aligned with the left control gate and a right source in the substrate aligned with the right control gate.