Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

摘要

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

主权项

1. An imaging device including a first substrate having a plurality of pixels and a second substrate having a driving circuit configured to drive each of the plurality of pixels, the imaging device comprising:
a first electrode at a bonding face of the first substrate, the first electrode at least partially surrounded by a first insulating film including a first diffusion preventing material with respect to the first electrode; and a second electrode at a bonding face of the second substrate and joined to the first electrode, the second electrode at least partially surrounded by a second insulating film including a second diffusion preventing material with respect to the second electrode, wherein the first substrate and the second substrate are stacked and a size of the second electrode is larger than a size of the first electrode.