发明名称 Memory storage device, memory controller, and data writing method
摘要 A memory storage device, a memory controller, and a data writing method are provided. The memory storage device has a rewritable non-volatile memory chip including a plurality of physical units, and each of the physical units has a plurality of physical pages. The data writing method includes configuring a plurality of logical units to be mapped to a portion of the physical units, and each of the logical unit has a plurality of logical pages. The data writing method also includes receiving a first write data from a host system and writing the first write data into the ith physical page in a substitute physical unit selected from the physical units. The data writing method further includes writing a first address access information corresponding to the first write data and a second address access information into the ith physical page. Herein i is a positive integer.
申请公布号 US8898372(B2) 申请公布日期 2014.11.25
申请号 US201113111959 申请日期 2011.05.20
申请人 Phison Electronics Corp. 发明人 Yeh Chih-Kang
分类号 G06F12/00;G06F11/14;G06F12/02;G06F11/10;G06F11/07;G06F11/20 主分类号 G06F12/00
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A data writing method, adapted to a memory storage device having a rewritable non-volatile memory chip, wherein the rewritable non-volatile memory chip comprises a plurality of physical units, and each of the physical units comprises a plurality of physical pages, the data writing method comprising: configuring a plurality of logical units to be mapped to a portion of the physical units, wherein each of the logical units comprises a plurality of logical pages; receiving a first write data from a host system; writing the first write data into the ith physical page in a substitute physical unit selected from the physical units, wherein i is a positive integer; writing a first address access information corresponding to the first write data and a second address access information into the ith physical page, wherein the second address access information is a second logical page corresponding to a second write data, the second write data written into the jth physical page in the substitute physical unit, and j is a positive integer and j is not equal to i; and scanning each of the physical pages to re-construct a reference table recording a mapping between the logical pages and the physical pages after the memory storage device is restated, wherein the second address access information is written into at least two different physical pages.
地址 Miaoli TW