| 发明名称 | Method for etching micro-electrical films using a laser beam | ||
| 摘要 | A method for etching with a laser beam having a predetermined wavelength an area of a layer of a first material, said area being deposited at the surface of at least two second materials, includes: depositing a layer of a third material on the layer of the first material, the first and the third materials having a chemical affinity on application of the laser beam greater than the chemical affinity during said application between the first material and each of said at least two second materials; and applying the laser beam to an area of a free surface of the layer of third material vertically above the area of the layer of first material with a fluence of said laser beam causing the separation of said area. | ||
| 申请公布号 | US8895451(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201313915162 | 申请日期 | 2013.06.11 |
| 申请人 | Commissariat a l'Energie Atomique et aux Energies Alternatives | 发明人 | Seiler Anne-Laure;Benwadih Mohammed |
| 分类号 | H01L21/302;H01L51/00;H01L51/10;H01L51/05;H01L21/311 | 主分类号 | H01L21/302 |
| 代理机构 | Burr & Brown, PLLC | 代理人 | Burr & Brown, PLLC |
| 主权项 | 1. A method for etching with a laser beam having a predetermined wavelength an area of a layer of a first material, said area being deposited at the surface of at least two second materials, wherein said method comprises: depositing a layer of a third material on the layer of the first material, the first and the third materials having a chemical affinity on application of the laser beam greater than the chemical affinity during said application between the first material and each of said at least two second materials; and applying the laser beam to an area of a free surface of the layer of third material vertically above the area of the layer of first material with a fluence of said laser beam causing the separation of said area. | ||
| 地址 | Paris FR | ||