| 发明名称 | High frequency amplifier | ||
| 摘要 | A high frequency amplifier is characterized wherein a power amplification element and at least one of temperature compensation elements are adjacently provided on a first semiconductor layer, a first wiring pattern connected to the power amplification element, a second wiring pattern connected to the temperature compensation element, and a ground electrode are provided on at least one of second semiconductor layers existing in layers different from the first semiconductor layer, and the ground electrode is formed on the second semiconductor layer corresponding to a region that substantially projects a crevice part on which the temperature compensation element and the power amplification element are provided, on the same plane as the first semiconductor element. | ||
| 申请公布号 | US8896380(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201313852159 | 申请日期 | 2013.03.28 |
| 申请人 | TDK Corporation | 发明人 | Shibuya Tomihiko;Ajioka Atsushi;Tsumita Atsushi |
| 分类号 | H03F3/04;H03F3/19;H01L23/66 | 主分类号 | H03F3/04 |
| 代理机构 | Posz Law Group, PLC | 代理人 | Posz Law Group, PLC |
| 主权项 | 1. A high frequency amplifier being characterized wherein a power amplification element and at least one of temperature compensation elements are adjacently provided on a first semiconductor layer, a first wiring pattern connected to the power amplification element, a second wiring pattern connected to the temperature compensation element, and a ground electrode are provided on at least one of second semiconductor layers existing in layers different from the first semiconductor layer, and the ground electrode is formed on the second semiconductor layer corresponding to a region that substantially projects a crevice part on which the temperature compensation element and the power amplification element are provided, on the same plane as the first semiconductor element. | ||
| 地址 | Tokyo JP | ||