| 发明名称 | Nonvolatile memory devices | ||
| 摘要 | Nonvolatile memory devices including memory cell arrays with first bit line regions and common source tapping regions which are alternately disposed on a substrate along a direction, a page buffer including second bit line regions aligned with the first bit line regions and page buffer tapping regions aligned with the common source tapping regions, and a plurality of bit lines spaced apart from one another and extending to the second bit line regions from the first bit line regions. | ||
| 申请公布号 | US8897089(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201113323275 | 申请日期 | 2011.12.12 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim JinTae;Kim Doogon |
| 分类号 | G11C16/28;G11C16/30;H01L27/115;H01L29/792;G11C16/04 | 主分类号 | G11C16/28 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A nonvolatile memory device, comprising: a memory cell array including a plurality of first bit line regions alternating with a plurality of common source tapping regions on a substrate; a page buffer including a plurality of second bit line regions aligned with the first bit line regions and a plurality of page buffer tapping regions aligned with the common source tapping regions; and a plurality of bit lines spaced apart from one another and extending to the second bit line regions from the first bit line regions. | ||
| 地址 | Gyeonggi-do KR | ||