Mask for use in photolithography, manufacturing method thereof and manufacturing method of devices by using the mask

摘要

Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.

主权项

1. A photomask comprising:
a substrate; an opaque pattern formed on the substrate; a first dielectric layer formed on the substrate and on the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, associated with an optical transfer function that depends on a spatial frequency, and having a negative refractive index that corresponds to a value of the spatial frequency that is in a range of 0.005 nm−1 to 0.03 nm−1, wherein the photomask is structured to operate in a Quasi-bound mode as a dispersion mode, and wherein a gap between the uppermost layer of a work target and the photomask is more than 0 and equal to or less than 35 μm.