Method for forming thin film using radicals generated by plasma

摘要

A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

主权项

1. A method for forming a thin film, comprising:
routing a source precursor from an injection port of a deposition reactor into a first region, a second region and a third region between the first and second regions, a region extending from the first region to the second region having a same constant height greater than a predetermined distance that is smaller than 5 mm; routing a first portion of radicals of a reactant precursor to the first region but not to the third region; routing a second portion of the radicals to the second region but not to the third region; mixing the first portion of the radicals and the source precursor in the first region to form a first mixture; mixing the second portion of the radicals and the source precursor in the second region to form a second mixture; forming a first thin film on a portion of the surface of a substrate by exposing the portion of the surface of the substrate to the first mixture within the first region; discharging the radicals and the source precursor in the first region via a first passage having a constant height lower than the predetermined distance, the first passage formed between the surface of the substrate and a surface of the deposition reactor facing the surface of the substrate; making a first relative movement between the substrate and the deposition reactor in the direction parallel to the surface of the substrate; exposing the portion of the surface of the substrate to the source precursor within the third region after making the first relative movement; making a second relative movement between the substrate and the deposition reactor in the direction parallel to the surface of the substrate; forming, after making the second relative movement, a second thin film on the first film by exposing the first film to the second mixture in the second region; and discharging the radicals and the source precursor in the second region via a second passage having a constant height lower than the predetermined distance, the second passage formed between the surface of the substrate and a surface of the deposition reactor facing the surface of the substrate.