发明名称 |
Method for producing and structuring a zinc oxide layer and zinc oxide layer |
摘要 |
Disclosed is a method for producing ZnO contact layers for solar cells. The layers are etched using hydrofluoric acid so as to generate a texture. |
申请公布号 |
US8894867(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201013390391 |
申请日期 |
2010.08.07 |
申请人 |
Forschungszentrum Juelich GmbH |
发明人 |
Bunte Eerke;Owen Jorj;Huepkes Juergen |
分类号 |
H01L21/302;H01L31/18;C23C14/58;H01L31/0236;C23C14/08 |
主分类号 |
H01L21/302 |
代理机构 |
Jordan and Hamburg LLP |
代理人 |
Jordan and Hamburg LLP |
主权项 |
1. A method for producing a zinc oxide layer on a flexible or rigid substrate by depositing the zinc oxide layer onto said substrate, in which the zinc oxide layer has a crater density and a crater structure that can be adjusted homogeneously and independently of deposition conditions by etching, the method comprising the steps of sputtering zinc oxide on to a substrate to provide a deposited zinc oxide layer, etching the deposited zinc oxide layer in at least first and second etching steps, etching in the first etching step with hydrofluoric acid in a concentration of more than 0.125 wt % to 4 wt %, etching in the second etching step with one of an acid that is not hydrofluoric acid or hydrofluoric acid in a concentration different from the hydrofluoric acid concentration employed in the first etching step, whereby in the first etching step craters are formed in the deposited zinc oxide layer that have a diameter of less than 300 nm, the craters having a density of 5 to 100 μm−2, and the craters have edges that are smoothed by the etching in the second etching step. |
地址 |
Juelich DE |