| 摘要 |
<p>The present invention relates to substrate processing apparatus and, more specifically, to substrate processing apparatus which uses plasma. The substrate processing apparatus according to an embodiment of the present invention includes: a chamber which has a processing space inside; a substrate supporting assembly which is positioned in the chamber and supports a substrate; a gas supplying unit which supplies gas to the inside of the chamber; and a power source which applies power which generates plasma from gas which is supplied to the inside of the housing. The substrate supporting assembly has an internal space which includes an electrostatic chuck which supports the substrate and lines which supply electric power or gas to the electrostatic chuck and includes one or multiple plates which are arranged in a lower cover including a metal material and between the electrostatic chuck and the lower cover. The electrostatic chuck includes the metal plate and the one or multiple plates are formed with a nonmetal material.</p> |
