发明名称 AG-IN ALLOY SPUTTERING TARGET
摘要 <p>The present invention provides an Ag-In alloy sputtering target for which abnormal discharge and splashing are reduced when sputtering to form a reflector electrode film from an Ag-In alloy. This Ag-In alloy sputtering target has a composition that contains 0.1-1.5 atom% of In, with the remainder consisting of Ag and unavoidable impurities. The content of each of the elements Si, Cr, Fe and Ni is 30 ppm or lower and the total content of these elements is 90 ppm or lower.</p>
申请公布号 KR20140134723(A) 申请公布日期 2014.11.24
申请号 KR20147031231 申请日期 2013.12.12
申请人 MITSUBISHI MATERIALS CORP. 发明人 NONAKA SOHEI;KOMIYAMA SHOZO
分类号 C23C14/34;C22C5/06 主分类号 C23C14/34
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