RESISTANCE SWITCHING MEMORY DEVICE AND METHOD OF THE SAME

摘要

According to the present invention, provided is a method for manufacturing a resistance change memory element of 3D lamination structure, which includes a step of forming a metal film and an insulating film on a substrate; a step of exposing a contact hole to a surface of the substrate by patterning the contact hole by using etching; a step of forming a resistance change oxide film all over the contact hole, the surface of the substrate, and the insulating film; and a step of forming an upper electrode on the resistance change oxide film and forms the contact hole into a non-circular shape in the etching step to make an electrical passage of a filament type indicated irregularly according to a position of the resistance change oxide film.